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Philips Semiconductors
Product Specification
TOPFET high side switch SMD version of BUK219-50Y
DESCRIPTION
Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package.
BUK220-50Y
QUICK REFERENCE DATA
SYMBOL IL SYMBOL PARAMETER Nominal load current (ISO) PARAMETER Continuous off-state supply voltage Continuous load current Continuous junction temperature On-state resistance Tj = 25C MIN. 2 MAX. 50 6 150 180 UNIT A UNIT V A C m
APPLICATIONS
General controller for driving lamps, motors, solenoids, heaters. VBG IL Tj RON
FEATURES
Vertical power TrenchMOS Low on-state resistance CMOS logic compatible Very low quiescent current Overtemperature protection Load current limiting Latched overload and short circuit protection Overvoltage and undervoltage shutdown with hysteresis On-state open circuit load detection Diagnostic status indication Voltage clamping for turn off of inductive loads ESD protection on all pins Reverse battery, overvoltage and transient protection
FUNCTIONAL BLOCK DIAGRAM
BATT STATUS POWER MOSFET CONTROL & PROTECTION CIRCUITS LOAD GROUND RG
INPUT
Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PINNING - SOT426
PIN 1 2 3 4 5 mb DESCRIPTION Ground Input (connected to mb) Status Load Battery
PIN CONFIGURATION
mb
SYMBOL
I S
3 12 45
B
TOPFET HSS
G
L
Fig. 2.
Fig. 3.
July 2001
1
Rev 2.000
Philips Semiconductors
Product Specification
TOPFET high side switch SMD version of BUK219-50Y
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VBG IL PD Tstg Tj Tsold PARAMETER Continuous supply voltage Continuous load current Total power dissipation Storage temperature Continuous junction temperature1 Mounting base temperature Reverse battery voltages2 -VBG -VBG Continuous reverse voltage Peak reverse voltage Application information RI, RS External resistors3 Input and status II, IS II, IS Continuous currents Repetitive peak currents Inductive load clamping EBL Non-repetitive clamping energy 0.1, tp = 300 s IL = 1 A, VBG = 16 V Tj = 150C prior to turn-off -5 -50 to limit input, status currents 3.2 during soldering Tmb 114C Tmb 25C CONDITIONS MIN. 0 -55 -
BUK220-50Y
MAX. 50 6 41 175 150 260
UNIT V A W C C C
16 32
V V
-
k
5 50
mA mA
75
mJ
ESD LIMITING VALUE
SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 k MIN. MAX. 2 UNIT kV
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance4 Rth j-mb Junction to mounting base 2.5 3 K/W CONDITIONS MIN. TYP. MAX. UNIT
1 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the Tj rating must be observed. 3 To limit currents during reverse battery and transient overvoltages (positive or negative). 4 Of the output power MOS transistor.
July 2001
2
Rev 2.000
Philips Semiconductors
Product Specification
TOPFET high side switch SMD version of BUK219-50Y
STATIC CHARACTERISTICS
Limits are at -40C Tmb 150C and typicals at Tmb = 25 C unless otherwise stated. SYMBOL VBG VBL -VLG -VLG PARAMETER Clamping voltages Battery to ground Battery to load Negative load to ground Negative load voltage1 Supply voltage VBG Operating range
2
BUK220-50Y
CONDITIONS IG = 1 mA IL = IG = 1 mA IL = 10 mA IL = 1 A; tp = 300 s battery to ground 9 V VBG 16 V VLG = 0 V Tmb = 25C
4
MIN. 50 50 18 20
TYP. 55 55 23 25
MAX. 65 65 28 30
UNIT V V V V
5.5
-
35
V A A A A mA A
IB IL IG IL
Currents Quiescent current3 Off-state load current Operating current
5 6
2
0.1 0.1 2 -
20 2 20 1 4 -
VBL = VBG Tmb = 25C IL = 0 A VBL = 0.5 V VBG 9 to 35 V 6V IL 1A 1A tp 300 s 300 s Tmb 25C 150C 25C 150C
Nominal load current Resistances
RON RON
On-state resistance7 On-state resistance
95
135 170 150
180 330 225 410 190
m m m m
RG
Internal ground resistance
IG = 10 mA
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. 2 On-state resistance is increased if the supply voltage is less than 9 V. 3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load. 4 The measured current is in the load pin only. 5 This is the continuous current drawn from the supply with no load connected, but with the input high. 6 Defined as in ISO 10483-1. For comparison purposes only. This parameter will not be characterised for automotive PPAP. 7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.
July 2001
3
Rev 2.000
Philips Semiconductors
Product Specification
TOPFET high side switch SMD version of BUK219-50Y
INPUT CHARACTERISTICS
BUK220-50Y
9 V VBG 16 V. Limits are at -40C Tmb 150C and typicals at Tmb = 25 C unless otherwise stated. SYMBOL II VIG VIG(ON) VIG(OFF) VIG II(ON) II(OFF) PARAMETER Input current Input clamping voltage Input turn-on threshold voltage Input turn-off threshold voltage Input turn-on hysteresis Input turn-on current Input turn-off current VIG = 3 V VIG = 1.5 V CONDITIONS VIG = 5 V II = 200 A MIN. 20 5.5 1.5 10 TYP. 90 7 2.4 2.1 0.3 MAX. 160 8.5 3 100 UNIT A V V V V A A
STATUS CHARACTERISTICS
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high. Limits are at -40C Tmb 150C and typicals at Tmb = 25 C unless otherwise stated. Refer to TRUTH TABLE. SYMBOL VSG VSG PARAMETER Status clamping voltage Status low voltage CONDITIONS IS = 100 A IS = 100 A Tmb = 25C IS IS Status leakage current Status saturation current1 Application information RS External pull-up resistor 47 k VSG = 5 V Tmb = 25C VSG = 5 V MIN. 5.5 2 TYP. 7 0.7 0.1 7 MAX. 8.5 1 0.8 15 1 12 UNIT V V V A A mA
OPEN CIRCUIT DETECTION CHARACTERISTICS
An open circuit load can be detected in the on-state. Refer to TRUTH TABLE. Limits are at -40C Tmb 150C and typical is at Tmb = 25 C. SYMBOL PARAMETER Open circuit detection IL(TO) IL(TO) Low current detect threshold Tj = 25C Hysteresis CONDITIONS 9 V VBG 35 V 50 85 170 30 340 255 mA mA mA MIN. TYP. MAX. UNIT
1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to prevent possible interference with normal operation of the device.
July 2001
4
Rev 2.000
Philips Semiconductors
Product Specification
TOPFET high side switch SMD version of BUK219-50Y
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40C Tmb 150C and typicals at Tmb = 25 C. Refer to TRUTH TABLE. SYMBOL PARAMETER Undervoltage VBG(UV) VBG(UV) Low supply threshold voltage1 Hysteresis Overvoltage VBG(OV) VBG(OV) High supply threshold voltage2 Hysteresis 40 45 1 2 CONDITIONS MIN.
BUK220-50Y
TYP.
MAX.
UNIT
4.2 0.5
5.5 -
V V
50 -
V V
TRUTH TABLE
ABNORMAL CONDITIONS DETECTED INPUT L H H H H H H SUPPLY UV X 0 0 1 0 0 0 OV X 0 0 0 1 0 0 LC X 0 1 X X 0 0 LOAD SC X 0 0 X 0 1 0 OT X 0 0 X 0 X 1 OFF ON ON OFF OFF OFF OFF H H L H H L L off on & normal on & low current detect supply undervoltage lockout supply overvoltage shutdown SC tripped OT shutdown3 LOAD OUTPUT STATUS DESCRIPTION
KEY TO ABBREVIATIONS
L H X 0 1 logic low logic high don't care condition not present condition present UV OV LC SC OT undervoltage overvoltage low current or open circuit load short circuit overtemperature
1 Undervoltage sensor causes the device to switch off and reset. 2 Overvoltage sensor causes the device to switch off to protect its load. 3 The status will continue to indicate OT (even if the input goes low) until the device cools below the reset threshold. Refer to OVERLOAD
PROTECTION CHARACTERISTICS.
July 2001
5
Rev 2.000
Philips Semiconductors
Product Specification
TOPFET high side switch SMD version of BUK219-50Y
OVERLOAD PROTECTION CHARACTERISTICS
BUK220-50Y
5.5 V VBG 35 V, limits are at -40C Tmb 150C and typicals at Tmb = 25 C unless otherwise stated. Refer to TRUTH TABLE. SYMBOL IL(lim) PARAMETER Overload protection Load current limiting Short circuit load protection Battery load threshold voltage1 Response time2 Overtemperature protection Tj(TO) Tj(TO) Threshold junction temperature3 Hysteresis 150 170 190 C VBL > VBL(TO) CONDITIONS VBL = VBG VBG 9 V MIN. 6 TYP. 9 MAX. 12 UNIT A
VBL(TO) td sc
VBG = 16 V VBG = 35 V
8 15 -
10 20 180
12 25 250
V V s
-
10
-
C
SWITCHING CHARACTERISTICS
Tmb = 25 C, 9 V VBG 16 V, for resistive load RL = 13 . SYMBOL td on dV/dton t on PARAMETER During turn-on Delay time Rate of rise of load voltage Total switching time During turn-off Delay time Rate of fall of load voltage Total switching time CONDITIONS to VIG = 5 V to 10% VL 30% to 70% VL to 90% VL to VIG = 0 V to 90% VL 70% to 30% VL to 10% VL 28 0.75 60 40 1 90 s V/s s s V/s s MIN. TYP. MAX. UNIT
td off dV/dtoff t off
-
36 0.75 60
54 1 90
CAPACITANCES
Tmb = 25 C; f = 1 MHz; VIG = 0 V. designed in parameters. SYMBOL Cig Cbl Csg PARAMETER Input capacitance Output capacitance Status capacitance CONDITIONS VBG = 13 V VBL = 13 V VSG = 5 V MIN. TYP. 15 100 11 MAX. 20 140 15 UNIT pF pF pF
1 The battery to load threshold voltage for short circuit protection is proportional to the battery supply voltage. A graph showing VBL(TO) versus VBG will be provided in the product specification. After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation. 2 Measured from when the input goes high. 3 After cooling below the reset temperature the switch will resume normal operation.
July 2001
6
Rev 2.000
Philips Semiconductors
Product Specification
TOPFET high side switch SMD version of BUK219-50Y
MECHANICAL DATA
Plastic single-ended surface mounted package (Philips version of D2-PAK); 5 leads (one lead cropped)
BUK220-50Y
SOT426
A E A1
D1 mounting base
D
HD
3 1
Lp
2
4
5
b
c Q
e
e
e
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 1.70 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20
OUTLINE VERSION SOT426
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 98-12-14 99-06-25
Fig.4. SOT426 surface mounting package1, centre pin connected to mounting base.
1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.5 g. For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18.
July 2001
7
Rev 2.000
Philips Semiconductors
Product Specification
TOPFET high side switch SMD version of BUK219-50Y
BUK220-50Y
DEFINITIONS
DATA SHEET STATUS DATA SHEET STATUS1 Objective data PRODUCT STATUS2 Development DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in ordere to improve the design and supply the best possible product This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A
Preliminary data
Qualification
Product data
Production
Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1 Please consult the most recently issued datasheet before initiating or completing a design. 2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
July 2001
8
Rev 2.000

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